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       SMD Schottky Barrier Rectifiers Page 1 REV: B Features -Ultra high-speed switching. Mechanical data -Case: Molded plastic, DO-214AC / SMA -T erminals: solderable per MIL-STD-750, method 2026. -Polarity: Indicated by cathode band. -weight: 0.055 grams CDBA520-HF Thru. CDBA5200-HF Maximum Ratings and Electrical Characteristics QW-JB021 CDBA 520-HF Comchip Technology CO., LTD. Max. repetitive peak reverse voltage Max. DC blocking voltage Max. RMS voltage Forward surge current Reverse Current Storage temperature CDBA 540-HF CDBA 560-HF CDBA 5100-HF CDBA 5150-HF Units Symbol Parameter VRRM VDC VRMS 20 20 14 40 40 28 60 60 42 100 100 70 150 150 105 V V V A A mA CDBA 5200-HF 200 200 140 Max. instantaneous forward voltage @ 5.0A, TA=25°C VF 0.50 0.55 0.75 0.81 0.87 V 0.90 Operating Temperature TJ -50 to +150 -50 to +175 °C Parameter Conditions on rate load (JEDEC method) 8.3ms single half sine-wave superimposed Forward rectified current see Fig.1 Thermal Resistance Diode Junction capacitance f=1MHZ and applied 4V DC reverse V oltage VR =V RRM TA=25°C VR =V RRM TA=100°C Junction to ambient Symbol IO IFSM IR RθJA CJ TSTG IR MIN. TYP . MAX. mA °C/W pF °C 5.0 125 0.5 20 24 380 -50 +175 Ratings at Ta=25°C unless otherwise noted. Single phase, half wave, 60Hz, resistive or inductive loaded. For capacitive load, derate current by 20% . -Low Profile surface mount applications in order to optimize board space. -Low power loss, high ef ficiency. -High current capability , low forward voltage drop. -High surge capability . -Guardring for overvoltage protection. Units -Epoxy: UL94-V0 rate flame retardant. -Silicon epitaxial planar chip,metal silicon junction. Reverse V oltage: 20 to 200 Volts Forward Current: 5.0 Amp RoHS Device Halogen Free Dimensions in inches and (millimeter) DO-214AC (SMA) 0.067 (1.70) 0.047 (1.20) 0.114 (2.90) 0.083 (2.10) 0.181 (4.60) 0.157 (4.00) 0.008(0.20) 0.004(0.10) 0.012 (0.30) TYP. 0.209 (5.30) 0.185 (4.70) 0.061 (1.55) 0.030 (0.75) 0.098 (2.50) 0.067 (1.70) |